HAIS100-P – (HAISxxx-P) Current Transducer

Part Number : HAIS100-P

Function : (HAISxxx-P) Current Transducer

Manufactures : LEM

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HAIS100-P image

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pinout

Description :

Current Transducer HAIS 50..400-P and HAIS 50..100-TP For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit (high power) and the secondary circuit (electronic circuit). IPN = 50 .. 400 A All Data are given with a R L = 10 k Ω Electrical data Primary nominal current rms IPN (A) 50 100 150 200 400 Primary current, measuring range IPM (A) ± ± ± ± ± 150 300 450 600 600 Type RoHS since date code 45231, 46272 45231, 46012 46172 45231 planned Features • Hall effect measuring principle • Galvanic isolation between primary • Isolation test voltage 2500V • Low power consumption • Single power supply +5V • Fixed offset & gain • Bus bar version available for 50A and • Insulated plastic case recognized according to UL94-V0. 100A ratings. and secondary circuit HAIS 50-P, HAIS 50-TP1) HAIS 100-P, HAIS 100-TP1) HAIS 150-P HAIS 200-P HAIS 400-P VOUT VREF RL ROUT CL VC IC Output voltage (Analog) @ IP IP = 0 Reference voltage 2) – Output voltage VREF Output impedance VREF Load impedance Load resistance Output internal resistance Capacitive loading Supply voltage (± 5 %) Current consumption @ VC = 5 V VREF ± (0.625·IP/IPN) V VREF ± 0.025 V 2.5 ± 0.025 V typ. 200 Ω ≥ 200 kΩ ≥2 kΩ < 10 Ω <1 µF 5 V 22 mA Advantages • Small size and space saving • Only one design for wide current • High immunity to external ratings range interference. Accuracy - Dynamic performance data X ε L TCVOE TCVREF TCVOUT / VREF TCVOUT VOM t ra tr di/dt Vno BW Accuracy 3) @ IPN , TA = 25°C Linearity error 0 .. 3 x IPN Temperature coefficient of VOE @ IP = 0 Temperature coefficient of VREF Temperature coefficient of VOUT / VREF @ IP = 0 Temperature coefficient of VOUT Magnetic offset voltage @ IP = 0, after an overload of 3 x IPN DC Reaction time @ 10 % of IPN Response time to 90 % of IPN step di/dt accurately followed Output voltage noise (DC ..10 kHz) (DC .. 1 MHz) Frequency bandwidth (-3 dB) 4) ≤± ≤± ≤± ≤± ≤± 1 0.5 0.3 0.01 0.2 % of IPN % of IPN mV/K %/K mV/K • VREF. IN/OUT Applications • AC variable speed drives • Static converters for DC motor drives • Battery supplied applications • Uninterruptible Power Supplies • Switched Mode Power Supplies • Power supplies for welding applications. (SMPS) (UPS) ≤ ± 0.05% of reading/K < ± 0.4 <3 <5 > 100 < 15 < 40 DC .. 50 % of IPN µs µs A/µs mVpp mVpp kHz Application Domain Notes : 1) -TP version is equipped with a primary bus bar. 2) It is possible to overdrive VREF with an external reference voltage between 2 - 2.8 V providing its ability to sink or source approximately 2.5 mA. 3) Excluding offset and hysteresis. 4) Small signal only to avoid excessive heatings of the magnetic core. • Industrial Page 1/3 061018/6 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice. www.lem.com Current T [...]

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HAIS100-P Datasheet


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