HY1606AP – N-Channel Enhancement Mode MOSFET

Part Number : HY1606AP

Function : N-Channel Enhancement Mode MOSFET

Manufactures : HOOYI

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Description :

HY1606AP N-Channel Enhancement Mode MOSFET Features • • • • 60V/60A, RDS(ON)=10.5 mΩ (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Pin Description G D S D Applications G • Power Management for Inverter Systems. S N-Channel MOSFET Ordering and Marking Information Package Code P HY1606A ÿ YYWWJ G P : TO220-3L Date Code YYWW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 1 www.hooyi-semi.com Free Datasheet http://www.datasheet-pdf.com/ HY1606AP Absolute Maximum Ratings Symbol VDSS VGSS TJ TSTG IS IDM ID PD RθJC RθJA EAS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current 300µs Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient Drain-Source Avalanche Energy L=0.3mH TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Parameter Rating 60 ±25 175 -55 to 175 60 260- 65 45 130 65 1.5 62.5 480 Unit Common Ratings (TA=25°C Unless Otherwise Noted) V °C °C A A A W °C/W °C/W mJ Mounted on Large Heat Sink Note¡G *Pulse width limited by safe operating area. Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) VSD trr Qrr a a (TA = 25°C Unless Otherwise Noted) Parameter Test Conditions HY1606AP Min. Typ. Max. Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS=60V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±25V, VDS=0V VGS=10V, IDS=40A ISD=20A, VGS=0V IDS=40A, dlSD/dt=100A/µs 60 2 – 3 10.5 1 30 4 ±100 13.5 V µA V nA mΩ V ns nC Diode Characteristics Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 0.8 50 74 1.1 – 2 www.hooyi-semi.com Free Datasheet http://www.datasheet-pdf.com/ HY1606AP Electrical Characteristics (Cont.) Symbol Parameter b (TA = 25°C Unless Otherwise Noted) Test Conditions HY1606AP Min. Typ. Max. Unit Dynamic Characteristics RG Ciss Coss Crss td(ON) Tr td(OFF) Tf Qg Qgs Qgd Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn- […]

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HY1606AP Datasheet


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