HY1607P – N-Channel Enhancement Mode MOSFET

Part Number : HY1607P

Function : N-Channel Enhancement Mode MOSFET

Manufactures : HOOYI

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HY1607P image

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pinout

Description :

HY1607P N-Channel Enhancement Mode MOSFET Features Pin Description • 68V/70A RDS(ON) = 6.5 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) G D S D Applications • Switching application • Power Management for Inverter Systems. G S N-Channel MOSFET Ordering and Marking Information P HY1607 YYÿ WWJ G Package Code P : TO220-3L Date Code YYWW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. HOOYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 1 www.hooyi-semi.com HY1607P Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300µs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings EAS Avalanche Energy, Single Pulsed Note *VD=50V TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C L=0.3mH Rating 68 25 175 -55 to 175 70 280 70 60 160 85 0.5 62.5 510 Unit V °C °C A A A W °C/W mJ Electrical Characteristics (T A = 25°C Unless Otherwise Noted) Symbol Parameter Test Conditions Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current RDS(ON) a Drain-Source On-state Resistance Diode Characteristics VSDa Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V, IDS=250µA VDS=55V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±25V, VDS=0V VGS=10V, IDS=40A ISD=40A, VGS=0V ISD=40A, dlSD/dt=100A/µs Min. 68 2 – – HY1607P Typ. Max. –1 – 10 34 – ±100 6.5 7 0.8 1 33 61 – Unit V µA V nA mΩ V ns nC 2 www.hooyi-semi.com HY1607P Electrical Characteristics (Cont.) (T A = 25°C Unless Otherwise Noted) Symbol Parameter Test Conditions Dynamic Characteristics b RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf Turn-off Fall Time Gate Charge Characteristics b VGS=0V,VDS=0V,F=1M […]

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HY1607P Datasheet


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