HY3506 PDF Datasheet – N-Channel MOSFET

Part Number : HY3506

Function : N-Channel Enhancement Mode MOSFET

Package : TO-220FB-3L, TO-263-2L

Manufactures : HOOYI ( http://www.hymexa.com/ )

Images :

HY3506 datasheet transistor

Features

1. 60V/190A RDS(ON)= mΩ (typ.) @ VGS=10V

2. Reliable and Rugged

3. Lead Free and Green Devices Available  (RoHS Compliant)

Absolute Maximum Ratings (Tc = 25°C)

1. Drain to source voltage : VDSS = 60 V
2. Gate to source voltage : VGSS = ± 25 V
3. Maximum Junction Temperature : Tj = 175 °C
4. Storage temperature : Tstg = -55 to +175 °C

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Applications

1. Switching application

2. Power Management for Inverter Systems

Other data sheets within the file : HY3506P, HY3506B

HY3506 Datasheet