HY3506P – N-Channel Enhancement Mode MOSFET

Part Number : HY3506P

Function : N-Channel Enhancement Mode MOSFET

Manufactures : HOOYI

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HY3506P image

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Description :

HY3506P/W N-Channel Enhancement Mode MOSFET Features 60V/190A RDS(ON) = 3.0 mΩ (typ.) @ VGS=10V Pin Description 100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G D G S D S TO-220 D TO-247 Applications • • Switching application Power Management for Inverter Systems. S G N-Channel MOSFET Ordering and Marking Information Package Code YYXXXJWW G P HY3506 ÿ YYXXXJWW G W HY3506 P : TO220-3L Date Code YYXXX WW Assembly Material G : Lead Free Device W : TO247-3L Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. HOOYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 1 www.hooyi-semi.com HY3506P/W Absolute Maximum Ratings Symbol VDSS VGSS TJ TSTG IS IDM ID PD RθJC RθJA EAS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Pulsed Drain Current – Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient TC=25°C TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Parameter Rating 60 ±25 175 -55 to 175 190 750*- 190 132 306 153 0.49 62.5 °C °C A A A W °C/W Unit Common Ratings (TA=25°C Unless Otherwise Noted) V Mounted on Large Heat Sink Avalanche Ratings Avalanche Energy, Single Pulsed L=0.3mH 1.3**- J Note¡G- Repetitive rating ; pulse width limiited by junction temperature *- Drain current is limited by junction temperature **- VD=48V Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON)- VSD – trr Qrr Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Parameter (TA = 25°C Unless Otherwise Noted) Test Conditions HY3506P/W Min. Typ. Max. Unit VGS=0V, IDS=250µA VDS=60V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±25V, VDS=0V VGS=10V, IDS=95A ISD=95A, VGS=0V ISD=95A, dlSD/dt=100A/µs 60 2.0 – 3.0 3.0 1 10 4.0 ±100 4.5 V µA V nA mΩ V ns nC Diode Characteristics Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 0.8 60 100 1.2 – 2 www.hooyi-semi.com HY3506P/W Electrical Characteristics (Cont.) Symbol Parameter (TA = 25°C Unless Otherwise Noted) Test Conditions HY3506P/W Min. Typ. Max. Unit Dynamic Characteristics RG Ciss Coss Crss td(ON) Tr td […]

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HY3506P Datasheet

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