This post explains for the semiconductor HY3506P.
The Part Number is HY3506P.
The function of this semiconductor is 60V,190A, N-Channel MOSFET.
The package is TO-220, TO-247 Type
Manufacturer: HOOYI Semicondcutor ( www.hooyi-semi.com )
Preview images :
This is 60V, 190A, N-Channel Enhancement Mode MOSFET.
1. RDS(ON) = 3.0 mΩ (typ.) @ VGS=10V Pin
2. 100% avalanche tested
3. Reliable and Rugged
4. Lead Free and Green Devices Available (RoHS Compliant)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 60 V
2. Gate to source voltage: VGSS = ± 25 V
3. Drain current: ID = 190 A
4. Maximum Power Dissipation: Pd = 306 W
5. Channel temperature: Tch = 175 °C
6. Storage temperature: Tstg = -55 to +175 °C
1. Switching application
2. Power Management for Inverter Systems
Other data sheets are available within the file: HY3506, HY3506W