ICE20N170 – N-Channel Enhancement Mode MOSFET

Part Number : ICE20N170

Function : N-Channel Enhancement Mode MOSFET

Manufactures : Icemos

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Description :

Preliminary Data Sheet ICE20N170 ICE20N170 N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high performance power systems HALOGEN Product Summary ID V(BR)DSS rDS(on) FREE TA=25oC ID=250uA VGS=10V VDS=480V D 20A 600V 0.17Ω 62nC Max Min Typ Typ Qg G S T0220 ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE. Standard Metal Heatsink 1=Gate, 2=Drain, 3=Source. Maximum ratings b Parameter , at Tj=25oC, unless otherwise specified Symbol Conditions Value Unit Continuous drain current Pulsed drain current Avalanche energy, single pulse ID ID, pulse E AS Tc=25oC Tc=25oC ID=10A 20 62 520 A A mJ Avalanche current, repetitive MOSFET dv/dt ruggedness Gate source voltage Power dissipation Operating and storage temperature Mounting torque a When mounted on 1inch square 2oz copper clad FR-4 I AR dv/dt limited by Tjmax VDS=480V, ID=20A, Tj=125oC Static AC (f>1Hz) Tc=25oC 20 50 ±20 ±30 180 -55 to +150 A V/ns VGS Ptot Tj, Tstg V W o C M 3 & 3.5 screws 60 Ncm b Preliminary Data Sheet – Specifications subject to change SP-20N170-000-5 05/15/2013 Free Datasheet http:/// 1 Preliminary Data Sheet ICE20N170 Parameter Thermal characteristics Thermal resistance, junctioncase a Thermal resistance, junctionambient a Soldering temperature, wave soldering only allowed at leads RthJC RthJA T sold leaded 1.6mm (0.063in.) from case for 10 s 0.7 o Symbol Conditions Values Min Typ Max Unit C/W 62 260 o C Electrical characteristics b , at T =25oC, unless otherwise specified j Static characteristics Drain-source breakdown voltage V(BR)DSS VGS(th) Gate threshold voltage VGS=0 V, ID=250µA VDS=VGS, ID=250µA VDS=600V, VGS=0V, o Tj=25 C VDS=600V, VGS=0V, o Tj=150 C VGS=±20 V, VDS=0V VGS=10V, ID=10A, o Tj=25 C VGS=10V, ID=10A, o Tj=150 C f=1 MHZ, open drain 600 2.1 – 640 3 0.1 3.9 1 V Zero gate voltage drain current IDSS µA – 0.17 0.52 4.3 100 100 0.199 Ω Ω nA Gate source leakage current Drain-source on-state resistance Gate resistance Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance IGSS RDS (on) RG Ciss Coss Crss gfs td(on) tr td(off) tf VGS=0 V, VDS=25 V, f=1 MHz – 2020 980 pF VDS>2*ID*RDS, ID=10A VDS=380V, VGS=10V, ID=20A, RG=4Ω (External) – 9 19 39 3.5 55 7 ns Transconductance Turn-on delay time Rise time Turn-off delay time Fall time S SP-20N170-000-5 05/15/2013 Free Datasheet http:/// 2 Preliminary Data Sheet ICE20N170 Parameter Gate charge characteristics Gate to source charge Gate to drain charge Gate c […]

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ICE20N170 Datasheet


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