ICE20N170B PDF – 600V, 20A, N-Ch, MOSFET, Transistor

Part Number: ICE20N170B

Function: N-Channel Enhancement Mode MOSFET

Package: TO-263 Type

Manufacturer: Micross Components

Images:

1 page
ICE20N170B pdf pinout

Description

ICE20N170B is 600V, 20A, N-Channel Enhancement Mode MOSFET(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.

N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.

Features

• Low rDS(on)

• Ultra Low Gate Charge

• High dv/dt capability

• High Unclamped Inductive Switching (UIS) capability

• High peak current capability

• Increased transconductance performance

• Optimized design for high performance power systems

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3 page
ICE20N170B mosfet datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 20 A

4. Power Dissipation : Ptot = 208 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

ICE20N170B PDF Datasheet

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