IRC4BC40F Datasheet – 600V, Fast Speed IGBT – IR

This post explains for the semiconductor IRC4BC40F.

The Part Number is IRC4BC40F.

The function of this semiconductor is INSULATED GATE BIPOLAR TRANSISTOR.

Manufacturers : International Rectifier

Preview images :

1 page
IRC4BC40F image

Description :

PD – 91454B IRG4BC40F INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.50V @VGE = 15V, IC = 27A n-channel Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a “drop-in” replacement for equivalent industry-standard Generation 3 IR IGBTs TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Aval […]

2 page
pinout

IRC4BC40F Datasheet


This entry was posted in Uncategorized. Bookmark the permalink.