IRF142 – N-Channel MOSFET Transistor

Part Number : IRF142

Function : N-Channel MOSFET Transistor

Manufactures : Inchange Semiconductor

Images :

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IRF142 image

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Description :

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF142 Description ·Drain Current ID=24A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.11Ω(Max) ·High Power,High Speed Applications Applications ·Switching power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 100 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 24 A Total Dissipation@TC=25℃ 125 W Max. Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 30 ℃/W isc 1 isc & iscsemi is registered trademark PDF pdfFactory Pro INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250µA RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=8A IGSS Gate Source Leakage Current VGS=±20V;VDS=0 IDSS Zero Gate Voltage Drain Current VDS=100V; VGS=0 VSD Diode Forward Voltage IS=24A; VGS=0 Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS=25V; VGS=0V; fT=1MHz tr Rise Time td(on) Turn-on Delay Time tf Fall Time ID=15A; VDD=50V; RL=4.7Ω td(off) Turn-off Delay Time isc Product Specification IRF142 MIN TYPE MAX UNIT 100 V 2.0 4.0 V 0.11 Ω ±100 nA 250 uA 2.3 V 1320 1600 250 300 pF 600 800 60 30 ns 30 80 isc 2 isc & iscsemi is registered trademark PDF pdfFactory Pro […]

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IRF142 Datasheet

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