IRF1704 – Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A)

Part Number: IRF1704

Function: Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A)

Manufacturer: International Rectifier


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IRF1704 image

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PD -94012B AUTOMOTIVE MOSFET Benefits l l l l l l l IRF1704 D 200°C Operaing Temperature Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Repetitive Avalanche Allowed up to Tj Max Automotive Qualified (Q101) HEXFET® Power MOSFET VDSS = 40V RDS(on) = 0.004Ω G S ID = 170A† Description Specifically designed for Automotive applications, this HEXFET® power MOSFET has a 200°C max operating temperature with a Stripe Planar design that utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET® power MOSFET are fast switching speed and improved repetitive avalanche rating. The continuing technology leadership of Internationl Rectifier provides 200°C operating temperature in a plastic package. At high ambient temperatures, the IRF1704 can carry up to 20% more current than similar 175 °C Tj max devices in the same package outline. This makes this part ideal for existing and emerging under-the-hood automotive applications such as Electric Power Steering (EPS), Fuel / Water Pump Control and wide variety of other applications. TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG TLEAD Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Lead Temperature‡ Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 170† 120 680 230 1.3 ± 20 670 100 23 1.9 -55 to + 200 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V mJ A mJ V/ns °C °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. ––– 0.50 ––– Max. 0.75 ––– 62 Units °C/W 1 02/13/02 IRF1704 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain (“Miller”) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance … Min. 40 […]

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IRF1704 Datasheet

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