IRF9130 – P-CHANNEL POWER MOSFET

Part Number : IRF9130

Function : P-CHANNEL POWER MOSFET

Manufactures : Seme LAB

Images :

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IRF9130 image

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pinout

Description :

IRF9130 MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) P–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES 1 11.18 (0.440) 10.67 (0.420) 26.67 (1.050) max. 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 2 –100V –11A 0.2W 20.32 (0.800) 18.80 (0.740) dia. 7.87 (0.310) 6.99 (0.275) 1.78 (0.070) 1.52 (0.060) • HERMETICALLY SEALED TO–3 METAL PACKAGE • SIMPLE DRIVE REQUIREMENTS • SCREENING OPTIONS AVAILABLE 1.09 (0.043) 0.97 (0.038) dia. 2 plcs. TO–3 Metal Package Pin 1 – Gate Pin 2 – Source Case – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD EAS IAR EAR dv/dt TJ , Tstg TL Gate – Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 12.07 (0.475) 11.30 (0.445) ±20V (VGS = 0 , Tcase = 25°C) (VGS = 0 , Tcase = 100°C) –11A –7.0A –50A 75W 0.6W/°C 2 Power Dissipation @ Tcase = 25°C Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current 1 81mJ –11A 7.5mJ –5.5V/ns –55 to +150°C 300°C Repetitive Avalanche Energy 1 Peak Diode Recovery 3 Operating and Storage Temperature Range Lead Temperature 1.6mm (0.63”) from case for 10 sec. Notes 1) Repetitive Rating – Pulse width limited by maximum junction temperature. 2) @ VDD = –25V , L ³ 1.0mH , RG = 25W , Peak IL = –11A , Starting TJ = 25°C 3) @ ISD £ –11A , di/dt £ –140A/ms , VDD £ BVDSS , TJ £ 150°C , Suggested RG = 7.5W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Prelim. 10/99 IRF9130 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter STATIC ELECTRICAL RATINGS BVDSS Drain – Source Breakdown Voltage DBVDSS Temperature Coefficient of DTJ Breakdown Voltage Static Drain – Source On–State RDS(on) Resistance 1 VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS IGSS IGSS CDC Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD LS Zero Gate Voltage Drain Current Forward Gate – Source Leakage Reverse Gate – Source Leakage Test Conditions VGS = 0 ID = –1mA Reference to 25°C ID = –1mA VGS = –10V ID = –7.0A VGS = –10V ID = –11A VDS = VGS ID = –250mA VDS ³ –15V IDS = –7.0A VGS = 0 VDS = 0.8 x Max TJ = 125°C VGS = –20V VGS = 20V Min. –100 Typ. Max. Unit V –0.087 0.3 0.35 –4 –25 –250 –100 100 12 860 350 125 15 1.0 2.0 29 7.1 21 60 140 140 140 –11 –50 V / °C W V S (É) –2 3 mA nA DYNAMIC CHARACTERISTICS Drain to Case Capacitance VGS = 0 Input Capacitance VDS = – 25V Output Capacitance f = 1MHz Reverse Transfer Capacitance Total Gate Charge VGS = –10V Gate – Source Charge ID = –11A Gate – Drain (“Miller”) Charge VDS = 0.5 x max Turn–On Delay Time VDD = –50V Rise Time ID = –11A Turn–Off Delay Time RG = 7.5W Fall Time SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Sour […]

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IRF9130 Datasheet


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