Part Number: IRF9130
Function: 100V, 11A, P-CHANNEL POWER MOSFET
Package: TO-3 Metal Type
Manufacturer: Seme LAB
Images:
1 page
Description:
This is – 100V, – 11A, P-Channel Power Mosfet.
IRF9130 MECHANICAL DATA Dimensions in mm (inches) 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) P–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) Features 1 11.18 (0.440) 10.67 (0.420) 26.67 (1.050) max. 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 2 –100V –11A 0.2W 20.32 (0.800) 18.80 (0.740) dia. 7.87 (0.310) 6.99 (0.275) 1.78 (0.070) 1.52 (0.060) • HERMETICALLY SEALED TO–3 METAL PACKAGE • SIMPLE DRIVE REQUIREMENTS • SCREENING OPTIONS AVAILABLE 1.09 (0.043) 0.97 (0.038) dia. 2 plcs. TO–3 Metal Package Pin 1 – Gate Pin 2 – Source Case – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD EAS IAR EAR dv/dt TJ , Tstg TL Gate – Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 12.07 (0.475) 11.30 (0.445) ±20V (VGS = 0 , Tcase = 25°C) (VGS = 0 , Tcase = 100°C) –11A –7.0A –50A 75W 0.6W/°C 2 Power Dissipation @ Tcase = 25°C Linear Derating Factor Single ) @ ISD £ –11A , di/dt £ –140A/ms , VDD £ BVDSS , TJ £ 150°C , Suggested RG = 7.5W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Prelim. 10/99 IRF9130 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter STATIC ELECTRICAL RATINGS BVDSS Drain – Source Breakdown Voltage DBVDSS Temperature Coefficient of DTJ Breakdown Voltage Static Drain – Source On–State RDS(on) Resistance 1 VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS IGSS IGSS CDC Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD LS Zero Gate Voltage Drain Current Forward Gate – Source Leakage Reverse Gate – Source Leakage Test Conditions Turn–Off Delay Time RG = 7.5W Fall Time SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Sour […]
IRF9130 Datasheet
