Part Number : IRFZ44
Function : Advanced Power MOSFET
Manufactures : Fairchild
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Description :
$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175° C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0.020 Ω (Typ.) IRFZ44 BVDSS = 60 V RDS(on) = 0.024Ω ID = 50 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 °C) Continuous Drain Current (TC=100 °C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 °C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds (2) (1) (1) (3) (1) Value 60 50 35.4 200 ±20 857 50 12.6 5.5 126 0.84 – 55 to +175 Units V A A V mJ A mJ V/ns W W/°C °C 300 Thermal Resistance Symbol RθJC RθCS RθJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 1.19 -62.5 °C/W Units Rev. B ©1999 Fairchild Semiconductor Corporation http:// IRFZ44 Electrical Characteristics (TC=25°C unless otherwise specified) Symbol BVDSS ∆BV/ ∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain ( Miller ) Charge Min. Typ. Max. Units 60 -2.0 —————–0.063 ——32.6 590 220 20 16 68 70 64 12.3 23.6 –4.0 100 -100 10 100 0.024 -680 255 40 40 140 140 83 –nC ns µA Ω Ω V V nA 1&+$11(/ 32:(5 026)(7 Test Condition VGS=0V,ID=250µA V/° C ID=250µA VGS=20V VGS=-20V VDS=60V See Fig 7 VDS=5V,ID=250µA VDS=48V,TC=150°C VGS=10V,ID=25A VDS=30V,ID=25A (4) (4) 1770 2300 pF VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=30V,ID=50A, RG=9.1Ω See Fig 13 VDS=48V,VGS=10V, ID=50A (4) (5) See Fig 6 & Fig 12 (4) (5) Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge (1) (4) Min. Typ. Max. Units ——–85 0.24 50 200 1.8 –A V ns µC Test Condition Integral reverse pn-diode in the MOSFET TJ=25 °C,IS=50A,VGS=0V TJ=25 °C,IF=50A diF/dt=100A/ µs (4) Notes; (1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature (2) L=0.4mH, IAS=50A, VDD=25V, RG=27Ω, Starting TJ =25°C (3) ISD ≤ 50A, di/dt ≤ 350A/µ s, VDD ≤ BVDSS […]
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