Part Number: IRL2310
Function: Power MOSFET
Manufacturer: International Rectifier
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Features:
PD – 9.1275 PRELIMINARY IRL2310 HEXFET ® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(on) Specified at V GS= 4.5V & 10V 175°C Operating Temperature
Description:
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of application. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. VDSS = 100V RDS(on) = 0.040 Ω ID = 40A Absolute Maximum Ratings Parameter ID @ T C = 25°C ID @ T C = 100°C IDM PD @T C = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, V GS @ 5.0V Continuous Drain Current, V GS @ 5.0V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 40 29 160 170 1.1 ±20 500 24 17 5.5 -55 to + 175 300 (1.6mm from case) 10 lbf•in (1.1N•m) Units A W W/°C V mJ A mJ V/ns °C ww w.D ata Sh eet 4U .co m Thermal Resistance Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Min. –––– –––– –––– Typ. –––– 0.50 –––– Max. 0.90 –––– 62 Units °C/W RθJC RθCS RθJA Revision 1 IRL2310 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain (“Miller”) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Min. 100 ––– 1.0 18 ––– Max. Units Conditions ––– V VGS = 0V, I D = 250µA ––– V/°C Reference to 25°C, I D = 1mA 0.040 VGS = 10V, I D = 24A Ω 0.050 VGS = 4.5V, I D = 20A 2.0 V VDS = VGS, ID = 250µA ––– S VDS = 50V, ID = 24A 25 […]