J377 – 2SJ377

Part Number : J377

Function : 2SJ377

Manufactures : Toshiba Semiconductor

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J377 image

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Description :

www.DataSheet.co.kr 2SJ377 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (L −π−MOSV) 2 2SJ377 5.2 ± 0.2 1.5 ± 0.2 Relay Drive, DC/DC Converter and Motor Drive Applications z 4 V gate drive z Low drain-source ON-resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.16 Ω (typ.) 1.2 MAX. Unit: mm 6.5 ± 0.2 0.6 MAX. : IDSS = −100 μA (max) (VDS = −60 V) : Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) 9.5 ± 0.3 : |Yfs| = 4.0 S (typ.) 5.5 ± 0.2 1.1 ± 0.2 0.6 MAX. 0.8 MAX. 2.3 ± 0.2 Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating −60 −60 ±20 −5 −20 20 273 −5 2 150 −55 to 150 Unit V V V A A W mJ A mJ °C °C 0.6 ± 0.15 1 2 1.05 MAX. 3 2.3 ± 0.15 2.3 ± 0.15 0.1 ± 0.1 2 1 Pulse (Note 1) GATE DRAIN (HEAT SINK) 3. SOURSE 1. 2. 3 Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― ― 2-7J1B Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 6.25 125 Unit °C / W °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = −25 V, Tch = 25°C (initial), L = 14.84 mH, RG = 25 Ω, IAR = −5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2010-02-05 Datasheet pdf – http://www.DataSheet4U.net/ www.DataSheet.co.kr 2SJ377 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr VDS = −10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = −60 V, VGS = 0 V ID = −10 mA, VGS = 0 V VDS = −10 V, ID = −1 mA VGS = −4 V, ID = −2.5 A VGS = −10 V, ID = −2.5 A […]

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J377 Datasheet



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