J412 – 2SJ412

Part Number : J412

Function : 2SJ412

Manufactures : Toshiba Semiconductor

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J412 image

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Description :

2SJ412 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV) 2SJ412 DC-DC Converter, Relay Drive and Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.7 S (typ.) • Low leakage current: IDSS = −100 μA (max) (VDS = −100 V) • Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg −100 −100 ±20 −16 −64 60 292 −16 6 150 −55 to 150 V V V A W mJ A mJ °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC ― JEITA ― TOSHIBA 2-10S1B Weight: 1.5 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.08 83.3 Unit °C/W °C/W JEDEC ― JEITA ― TOSHIBA 2-10S2B Weight: 1.5 g (typ.) Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = −25 V, Tch = 25°C (initial), L = 1.84 mH, RG = 25 Ω, IAR = −16 A Note 3: Repetitive rating: pulse width limited by maximum junction temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2009-09-29 Electrical Characteristics (Ta = 25°C) 2SJ412 Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Gate-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Switching time Turn-on time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain (“miller”) charge Symbol Test Condition IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss VGS = ±16 V, VDS = 0 V VDS = −100 V, VGS = 0 V ID = −10 mA, VGS = 0 V VDS = −10 V, ID = −1 mA VGS = −4 V, ID = −6 A VGS = −10 V, ID = −6 A VDS = −10 V, ID = −6 A VDS = −10 V, VGS = 0 V, f = 1 MHz Min Typ. ― ― −100 −0.8 ― ― 4.5 ― […]

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J412 Datasheet


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