J6810 – NPN Triple Diffused Planar Silicon Transistor

Part Number : J6810

Function : NPN Triple Diffused Planar Silicon Transistor

Manufactures : Fairchild Semiconductor

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Description :

FJAF6810 FJAF6810 High Voltage Color Display Horizontal Deflection Output • High Collector-Base Breakdown Voltage : BVCBO = 1500V • High Switching Speed : tF(typ.) =0.1µs • For Color Monitor TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP- PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Rating 1500 750 6 10 20 60 150 -55 ~ 150 Units V V V A A W °C °C – Pulse Test: Pulse Width=5ms, Duty Cycle < 10% Electrical Characteristics TC=25°C unless otherwise noted Symbol ICES ICBO IEBO BVEBO hFE1 hFE2 VCE(sat) VBE(sat) tSTG- tF- Parameter Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=500µA, IC=0 VCE=5V, IC=1A VCE=5V, IC=6A IC=6A, IB=1.5A IC=6A, IB=1.5A VCC=200V, IC=6A, RL=33Ω IB1=1.2A, IB2= - 2.4A 6 10 5 8 3 1.5 3 0.2 V V µs µs Min Typ Max 1 10 1 Units mA µA mA V - Pulse Test: PW=20µs, duty Cycle=1% Pulsed Thermal Characteristics TC=25°C unless otherwise noted Symbol RθjC Parameter Thermal Resistance, Junction to Case Typ Max 2.08 Units °C/W ©2001 Fairchild Semiconductor Corporation Rev. A2, May 2001 FJAF6810 Typical Characteristics 10 100 IB=2.0A VCE = 5V Ta = 125 C 0 IC [A], COLLECTOR CURRENT 8 6 hFE, DC CURRENT GAIN Ta = 25 C 0 Ta = - 25 C 10 0 IB=0.6A 4 IB=0.4A IB=0.2A 2 0 0 2 4 6 8 10 12 14 1 0.1 1 10 100 VCE [V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 100 10 VCE(sat) [V], SATURATION VOLTAGE 10 VCE(sat) [V], SATURATION VOLTAGE IC = 5 IB IC = 3 IB 1 Ta = 25 C Ta = 125 C 0 0 1 Ta = 125 C Ta = 25 C Ta = - 25 C 0.1 0 0 0 0.1 Ta = - 25 C 0 0.01 0.1 1 10 0.01 0.1 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage 14 10 VCE = 5V 12 VCC = 200V, IC = 6A, IB1 = 1.2A IC [A], COLLECTOR CURRENT tSTG & tF[µs], SWITCHING TIME 10 tSTG 1 8 6 0.1 tF 4 Ta = 125 C 2 0 25 C 0 - 25 C 0 0 0.0 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1 10 VBE [V], BASE-EMITTER VOLTAGE IB2 [A], REVERSE BASE CURRENT Figure 5. Base-Emitter On Voltage Figure 6. Resistive Load Switching Time ©2001 Fairchild Semiconductor Corporation Rev. A2, May 2001 FJAF6810 Typical Characteristics (Continued) 100 10 VCC = 200V, IC = 6A, IB2 = - 2.4A 10 VCC = 200V, IB1 = 1.0A, IB2 = - 2.4A tSTG tSTG & tF [µs], SWITCHING TIME tSTG & tF[µ s], SWITCHING TIME tSTG 1 1 tF tF 0 [...]

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J6810 Datasheet


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