J6920 Datasheet – FJJ6920 – 1700V, NPN Transistor

Part Number : J6920, FJJ6920

Function : 1700V, NPN Transistor

Package : TO-264 Type

Manufactures : FAIRCHILD

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Description :

FJL6920 FJL6920 High Voltage Color Display Horizontal Deflection Output • High Collector-Base Breakdown Voltage : BVCBO = 1700V • Low Saturation Voltage : VCE(sat) = 3V (Max.) • For Color Monitor 1 TO-264 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP- PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Rating 1700 800 6 20 30 200 150 -55 ~ 150 Units V V V A A W °C °C – Pulse Test: PW=300µs, duty Cycle=2% Pulsed Electrical Characteristics TC=25°C unless otherwise noted Symbol ICES ICBO IEBO BVCBO BVCEO BVEBO hFE1 hFE2 VCE(sat) VBE(sat) tSTG- tF- Parameter Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IC=500µA, IE=0 IC=5mA, IB=0 IE=500µA, IC=0 VCE=5V, IC=1A VCE=5V, IC=11A IC=11A, IB=2.75A IC=11A, IB=2.75A VCC=200V, IC=10A, RL=20Ω IB1=2.0A, IB2= – 4.0A 0.15 1700 800 6 8 5.5 8.5 3 1.5 3 0.2 V V µs µs Min. Typ. Max. 1 10 1 Units mA µA mA V V V – Pulse Test: PW=20µs, duty Cycle=1% Pulsed Thermal Characteristics TC=25°C unless otherwise noted Symbol RθjC Parameter Thermal Resistance, Junction to Case Typ Max 0.625 Units °C/W ©2001 Fairchild Semiconductor Corporation Rev. A, May 2001 FJL6920 Typical Characteristics 16 100 IB=4.0A 14 VCE = 5V IB=2.0A IB =1.5A IB =1.0A Ta = 125 C o IC [A], COLLECTOR CURRENT Ta = 25 C o 10 hFE, DC CURRENT GAIN 12 8 10 Ta = – 25 C o 6 IB=0.5A IB=0.2A 4 2 0 0 2 4 6 8 10 1 0.1 1 10 100 VCE [V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT Figure 1. Static Characteristics Figure 2. DC Current Gain 10 10 VCE(SAT) [V], SATURATION VOLTAGE Ta = 125 C 1 o o VCE(SAT) [V], SATURATION VOLTAGE IC = 3 IB IC = 5 IB Ta = 125 C 1 o o Ta = 25 C Ta = – 25 C o Ta = 25 C 0.1 0.1 Ta = – 25 C o 0.01 0.1 1 10 100 0.01 0.1 1 10 100 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage 16 10 14 VCE = 5V VCC = 200V, IC = 10A, IB1 = 2A IC [A], COLLECTOR CURRENT 12 tSTG & tF [µs], SWITCHING TIME tSTG 1 10 8 6 0.1 tF 4 2 125 C 0 0.0 0.2 0.4 o 25 C 0.6 o – 25 C 0.01 0.8 1.0 1.2 1 10 o VBE [V], BASE-EMITTER VOLTAGE IB2 [A], REVERSE BASE CURRENT Figure 5. Base-Emitter On Voltage Figure 6. Resistive Load Switching Time ©2001 Fairchild Semiconductor Corporation Rev. A, May 2001 FJL6920 Typical Characteristics (Continued) 100 […]

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J6920 Datasheet