K117 – 2SK117

Part Number : K117

Function : 2SK117

Manufactures : Toshiba Semiconductor

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Description :

2SK117 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK117 Low Noise Audio Amplifier Applications • High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) High breakdown voltage: VGDS = −50 V Low noise: NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ) High input impedance: IGSS = −1 nA (max) (VGS = −30 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating −50 10 300 125 −55~125 Unit V mA mW °C °C Note: Using continuously under heavy loads (e.g. the application of JEDEC TO-92 high temperature/current/voltage and the significant change in JEITA SC-43 temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. TOSHIBA 2-5F1D operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Weight: 0.21 g (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Gate cut-off current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Symbol IGSS V (BR) GDS IDSS (Note) VGS (OFF) ⎪Yfs⎪ Ciss Crss NF (1) Noise figure NF (2) Test Condition VGS = −30 V, VDS = 0 VDS = 0, IG = −100 μA VDS = 10 V, VGS = 0 VDS = 10 V, ID = 0.1 μA VDS = 10 V, VGS = 0, f = 1 kHz VDS = 10 V, VGS = 0, f = 1 MHz VGD = −10 V, ID = 0, f = 1 MHz VDS = 10 V, RG = 1 kΩ ID = 0.5 mA, f = 10 Hz VDS = 10 V, RG = 1 kΩ ID = 0.5 mA, f = 1 kHz Min ⎯ −50 1.2 −0.2 4.0 ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ 15 13 3 5 Max −1.0 ⎯ 14 −1.5 ⎯ ⎯ ⎯ 10 dB ⎯ 1 2 Unit nA V mA V mS pF pF Note: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6~14 mA 1 2007-11-01 Free Datasheet http:/// 2SK117 2 2007-11-01 Free Datasheet http:/// 2SK117 3 2007-11-01 Free Datasheet http:/// 2SK117 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In develop […]

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K117 Datasheet


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