Part Number: K11A65D, TK11A65D
Function: 650V, N-ch, MOSFET, Transistor
Package: TO-220SIS
Manufacturer: Toshiba Semiconductor
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Description:
MOSFETs Silicon N-Channel MOS (π-MOS) TK11A65D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 7.5 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK11A65D 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 650 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 11 A Drain current (pulsed) (Note 1) IDP 44 Power dissipation (Tc = 25) PD 45 W Single-pulse avalanche energy (Note 2) EAS 506 mJ Avalanche current IAR 11 A Repetitive avalanche energy (Note 3) EAR 4.5 mJ Channel temperature Tch 150 Storage temperature Tstg -55 to 150 Note: Using continuously under h […]
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