Part Number: K12A50D, K12A500, 102020
Function: 500V, 12A, N-Channel MOSFET
Package: TO-220 Type
Manufacturer: Toshiba Semiconductor
Images:
Description:
The K12A500 is 500V, 12A, N-Channel MOSFET. N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.
An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.
When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.
Features:
1. Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.)
2. High forward transfer admittance: |Yfs| = 6.0 S (typ.)
3. Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)
4. Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 500 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 12 A
4. Drain peak current : ID(pulse) = 48 A
5. Drain power dissipation : Pd = 45 W
6. Single pulse avalanche energy : Eas = 365 mJ
7. Channel temperature: Tch = 150°C
8. Storage temperature: Tstg = -55 to +150 °C
Pinout
Applications :
1. Switching Regulator
K12A500 Datasheet PDF
