Part Number: K13A65U, TK13A65U
Function: 650V, 13A, N-Channel MOSFET ( Transistor )
Package: TO-220 Type
Manufacturer: Toshiba Semiconductor
This is one of the types of MOSFETs and is a kind of transistor.
Images:
Description:
This is 650V, 13A, Silicon N Channel MOS Type (DTMOS II) TOSHIBA Field Effect Transistor.
Features:
• Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 8.0 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 650 V)
• Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
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Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 650 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 13 A
4. Drain Power Dissipation: Pd = 40 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. Switching Regulator