K14A55D Datasheet – 550V, Nch, MOSFET – Toshiba

This post explains for the semiconductor K14A55D.

The Part Number is K14A55D.

The function of this semiconductor is TK14A55D.

Manufacturers : Toshiba

Preview images :

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K14A55D image

Description :

TK14A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK14A55D Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.5 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 550 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC (Note 1) Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 550 ±30 14 56 50 521 14 5.0 150 −55 to 150 Unit V V A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source JEDEC ⎯ JEITA SC-67 TOSHIBA 2-10U1B Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the a […]

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pinout

K14A55D Datasheet



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