K15A60U – TK15A60U

Part Number : K15A60U

Function : TK15A60U

Manufactures : Toshiba

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Description :

TK15A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK15A60U Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 ±30 15 30 40 81 15 4 150 -55 to 150 Unit V V A W mJ A mJ °C °C Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range 1: Gate 2: Drain 3: Source JEDEC JEITA TOSHIBA ⎯ SC-67 2-10U1B Note: Weight: 1.7 g (typ.) Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 3.125 62.5 Unit 2 °C/W °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 0.63 mH, RG = 25 Ω, IAR = 15 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 3 1 Start of commercial production 2008-02 1 2013-11-01 Free Datasheet http://www.0PDF.com TK15A60U Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton tf VDD ≈ 300 V Turn-OFF time Total gate charge Gate-source charge Gate-drain charge toff Qg Qgs Qgd VDD ≈ 400 V, VGS = 10 V, ID = 15 A Duty ≤ 1%, tw = 10 μs 10 V ID = 7.5 A VOUT VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±30 V, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 7.5 A VDS = 10 V, ID = 7.5 A Min ⎯ ⎯ 600 3.0 ⎯ 3.0 ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ 0.24 8.5 950 47 2300 37 80 8 105 17 10 7 Max ±1 100 ⎯ 5.0 0.3 ⎯ ⎯ ⎯ ⎯ pF Unit μA […]

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K15A60U Datasheet


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