Part Number : K18A50D
Function : Field Effect Transistor
Manufactures : Toshiba
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Description :
TK18A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK18A50D Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.22 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 ±30 18 72 50 533 18 5.0 150 −55 to 150 Unit V V A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ⎯ SC-67 2-10U1B Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.5 62.5 Unit Internal Connection 2 °C/W °C/W Note 1: Please use devices on conditions that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 2.8 mH, RG = 25 Ω, IAR = 18 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 3 Start of commercial production 2009-01 1 2013-11-01 Free Datasheet http:// TK18A50D Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge tf toff Qg Qgs Qgd VDD ≈ 400 V, VGS = 10 V, ID = 18 A Duty ≤ 1%, tw = 10 μs Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton 10 V VGS 0V 50 Ω ID = 9 A VOUT VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±30 V, VDS = 0 V VDS = 500 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 9 A VDS = 10 V, ID = 9 A Min ⎯ ⎯ 500 2.0 ⎯ 2.4 ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ 0.22 8.5 2600 11 280 5 […]
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