K18A50D PDF Datasheet – 500V, 18A, MOSFET

Part Number : K18A50D, TK18A50D

Function : 500V, 18A, MOSFET ( Field Effect Transistor )

Package : TO-220SIS Type

Manufactures : Toshiba

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K18A50D image

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Description :

This is Silicon N Channel MOS Type Field Effect Transistor.

Applications :

1. Low drain-source ON resistance: RDS (ON) = 0.22 Ω (typ.)

2. High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.)

3. Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)

4. Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 500 V

2. Gate to source voltage : VGSS = ± 30 v

3. Drain current : ID = 18 A

4. Allowable Power Dissipation : Pd = 50 W

5. Channel temperature : Tch = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

 

 

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K18A50D Datasheet