K20A60U – TK20A60U

Part Number : K20A60U

Function : TK20A60U

Manufactures : Toshiba

Images :

1 page
K20A60U image

2 page
pinout

Description :

TK20A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK20A60U Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.165 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 12 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 ±30 20 40 45 144 20 4.5 150 -55 to 150 Unit V V A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source JEDEC ⎯ JEITA SC-67 TOSHIBA 2-10U1B Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Internal Connection Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.78 62.5 Unit °C/W °C/W 2 Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 0.63 mH, RG = 25 Ω, IAR = 20 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 3 Start of commercial production 2008-05 1 2013-11-01 Electrical Characteristics (Ta = 25°C) TK20A60U Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Switching time Turn-on time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge Symbol Test Condition IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss VGS = ±30 V, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 10 A VDS = 10 V, ID = 10 A VDS = 10 V, VGS = 0 V, f = 1 MHz tr 10 V VGS 0V ID = 10 A VOUT ton 50 Ω RL =30Ω tf VDD ≈ 300 V toff Duty ≤ 1%, tw = 10 μs Qg Qgs VDD ≈ 400 V, VGS = 10 V, ID = 20 A Qgd Min Typ. Max ⎯ ⎯ ±1 ⎯ ⎯ 100 600 ⎯ ⎯ 3.0 ⎯ 5.0 ⎯ 0.165 0.19 3 1 […]

3 page
image

K20A60U Datasheet


This entry was posted in Uncategorized. Bookmark the permalink.