K2225 – 2SK2225

Part Number : K2225

Function : 2SK2225

Manufactures : Hitachi Semiconductor

Images :

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K2225 image

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pinout

Description :

2SK2225 Silicon N-Channel MOS FET ADE-208-140 1st. Edition Application High speed power switching Features • High breakdown voltage (VDSS = 1500 V) High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2225 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)- I DR Pch- Tch Tstg 2 1 Ratings 1500 ±20 2 7 2 50 150 –55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Symbol V(BR)DSS I GSS Min 1500 — — 2.0 — 0.45 —— Typ — 9 0.75 990 125 60 17 50 150 50 0.9 1750 Max — ±1 500 4.0 12 — Unit V µA µA V Ω S pF pF pF ns ns ns ns V ns I F = 2 A, VGS = 0 I F = 20 A, VGS = 0, diF / dt = 100 A / µs Test conditions I D = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS =1200 V, VGS = 0 I D = 1 mA, VDS = 10 V ID = 1 A VGS = 15 V*1 ID = 1 A VDS = 20 V*1 VDS = 10 V VGS = 0 f = 1 MHz ID = 1 A VGS = 10 V RL = 30 Ω Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 2 Power vs. Temperature Derating 80 Pch (W) I D (A) 10 3 1 0.3 0.1 0.03 Ta = 25 °C 0 50 100 Case Temperature 150 Tc (°C) 200 0.01 10 C D 2SK2225 Maximum Safe Operation Area 10 µs 0 10 PW = 60 1 10 m s µs s m (1 Channel Dissipation O Drain Current pe 40 sh 20 Operation in this area is limited by R DS(on) 30 100 300 1000 3000 10000 Drain to Source Voltage V DS (V) tio ra n c (T = ot ) 25 ) °C Typical Output Characteristics 5 Pulse Test 7V 3 6V ID 1.2 (A) 1.6 15 V 2.0 10 V 8V Typical Transfer Characteristics Drain Current I D (A) 4 V DS = 25 V Pulse Test 2 Drain Current 0.8 Tc = 75 °C 25 °C –25 °C 1 5V VGS = 4 V 0.4 0 20 40 60 Drain to Source Voltage 80 100 V DS (V) 0 2 4 6 Gate to Source Voltage 8 10 V GS (V) 3 2SK2225 Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 40 I D= 3 A 30 2A 1A 0.5 A 0 4 8 12 Gate to Source Voltage 16 V GS (V) 20 Drain to Source On State Resistance R DS(on) ( Ω ) Drain to Source Saturation Voltage V DS(on) (V) 50 Static Drain to Source State Resistance vs. Drai […]

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K2225 Datasheet


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