K2545 – 2SK2545

Part Number : K2545

Function : 2SK2545

Manufactures : Toshiba Semiconductor

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K2545 image

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pinout

Description :

www.DataSheet.co.kr 2SK2545 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2545 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.9 Ω(typ.) : |Yfs| = 5.5 S (typ.) Unit: mm : IDSS = 100 μA (max) (VDS = 600 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 6 24 40 345 6 4 150 −55~150 Unit V V V A A W mJ A mJ °C °C Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-67 2-10R1B Weight: 1.9 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 3.125 62.5 Unit °C / W °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 16.8 mH, RG = 25 Ω, IAR = 6 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2006-11-08 Datasheet pdf – http://www.DataSheet4U.net/ www.DataSheet.co.kr 2SK2545 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Gate−source breakdown voltage Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton tf toff Qg Qgs Qgd VDD ≈ 400 V, VGS = 10 V, ID = 6 A VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±25 V, VDS = 0 V IG = ±10 μA, VGS = 0 V VDS = 600 V, VDS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 3 A VDS = 10 V, ID = 3 A Min — ±30 — 600 2.0 — 2.0 — Typ. — 0.9 5.5 1300 130 400 25 Max ±10 — 100 — 4.0 1.25 — pF Unit μA V μA V V Ω S Tu […]

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K2545 Datasheet


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