K2699 Datasheet – 600V, Nch MOSFET

This post explains for the semiconductor K2699.

The Part Number is K2699.

The function of this semiconductor is 2SK2699.

Manufacturers : Toshiba Semiconductor

Preview images :

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K2699 image

Description :

2SK2699 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2699 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.5 Ω (typ.) : |Yfs| = 11 S (typ.) Unit: mm : IDSS = 100 μA (max) (VDS = 600 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 12 48 150 605 12 15 150 −55~150 Unit V V V A A W mJ A mJ °C °C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-65 2-16C1B […]

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K2699 Datasheet



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