K2700 Datasheet – 900V, 3A, MOSFET – 2SK2700 Transistor

Part Number : K2700, 2SK2700

Function : 900V, 3A, MOSFET

Pacakge : TO-220 Type

Manufactures : Toshiba Semiconductor

Images :

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Description :

K2700 is TOSHIBA Field Effect Transistor Silicon N Channel MOS Type.

Applications :

1. Chopper Regulator, DC–DC Converter and Motor Drive Applications

Features :

1. Low drain–source ON resistance : RDS (ON) = 3.7 Ω (typ.)

2. High forward transfer admittance : |Yfs| = 2.6 S (typ.)

3. Low leakage current : IDSS = 100 μA (max) (VDS = 720 V)

4. Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 900 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 3A

4. Channel dissipation : Pch = 40 W

5. Channel temperature : Tch = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

 

Drain power dissipation (Tc = 25°C) :

Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-67 2-10R1B 4 150 −55 to 150 Weight: 1.9 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch–c) Rth (ch–a) Max 3.125 62.5 Unit °C / W °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 60.0 mH, RG = 25 Ω, IAR = 3 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2009-09-29 2SK2700 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Gate–source breakdown voltage Drain cut–off current Drain–source breakdown voltage Gate threshold voltage Drain–source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol […]

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K2700 Datasheet