K2700 Transistor – 900V, 3A, MOSFET, 2SK2700 ( Datasheet PDF )

Part Number : K2700, 2SK2700

Function : 900V, 3A, MOSFET

Package : TO-220 Type

Manufactures : Toshiba Semiconductor

Images :

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K2700 image

Description :

K2700 is Silicon N Channel MOS Type Field Effect Transistor.

Features :

1. Low drain–source ON resistance : RDS (ON) = 3.7 Ω (typ.)

2. High forward transfer admittance : |Yfs| = 2.6 S (typ.)

3. Low leakage current : IDSS = 100 μA (max) (VDS = 720 V)

4. Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 900 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 3 A

4. Drain Power Dissipation : Pd = 40 W

5. Channel temperature : Tch = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

 

Applications :

1. Chopper Regulator, DC–DC Converter and Motor Drive

 

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K2700 Datasheet