K2750 PDF Datasheet – 600V, 3.5A, MOSFET – 2SK2750

This post explains for the MOSFET.

The Part Number is K2750, 2SK2750.

The function of this semiconductor is 600V, 3.5A, MOSFET.

Manufacturers : Toshiba

Preview images :

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K2750 image

Description :

K2750 is Silicon N Channel MOS Type Field Effect Transistor.

Features :

1. Low drain−source ON resistance : RDS (ON) = 1.7 Ω (typ.)

2. High forward transfer admittance : |Yfs| = 3.0 S (typ.)

3. Low leakage current : IDSS = 100 μA (max) (VDS = 600 V)

4. Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 600 V

2. Gate to source voltage : VGSS = ± 30 V

3. Drain current : ID = 3.5 A

4. Drain Power Dissipation : Pd = 35 W

5. Channel temperature : Tch = 150 °C

6. Storage temperature : Tstg = -55 to +150 °C

 

Applications :

1. Chopper Regulator

2. DC−DC Converter and Motor Drive

 

Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA — SC-67 2-10R1B Weight: 1.9 g (typ.) Note: Using continuously under he […]

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K2750 Datasheet