K2962 – 2SK2962

Part Number : K2962

Function : 2SK2962

Manufactures : Toshiba Semiconductor

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K2962 image

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Description :

2SK2962 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV) 2 2SK2962 Chopper Regulator, DC−DC Converter and Motor Drive Applications z 4-V gate drive z Low drain−source ON resistance z High forward transfer admittance z Enhancement mode : RDS (ON) = 0.5 Ω (typ.) : |Yfs| = 1.2 S (typ.) Unit: mm z Low leakage current : IDSS = 100 μA (max) (VDS = 100 V) : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 100 100 ±20 1 3 0.9 137 1 0.09 150 −55~150 Unit V V V A A W mJ A mJ °C °C Pulse (Note 1) JEDEC JEITA TOSHIBA TO-92MOD — 2-5J1C Weight: 0.36 (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to ambient Symbol Rth (ch−a) Max 138 Unit °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 221 mH, RG = 25 Ω, IAR = 1 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2006-11-20 2SK2962 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = 100 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 4 V, ID = 0.5 A VGS = 10 V, ID = 0.5 A VDS = 10 V, ID = 0.5 A Min — — 100 0.8 — — 0.6 — — — — Typ. — — — — 0.65 0.5 1.2 140 20 45 8 Max ±10 100 — 2.0 0.95 0.7 — — — — — pF Unit μA μA V V Ω S Turn−on time Switching time Fall time ton 100 — 13 — ns tf — 45 — Turn−off time Total gate charge (gate−source plus gate−drain) Gate−source charge Gate−drain (“mill […]

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K2962 Datasheet


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