K3053 – 2SK3053

Part Number : K3053

Function : 2SK3053

Manufactures : NEC

Images :

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K3053 image

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pinout

Description :

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3053 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3053 is N-Channel MOS Field Effect Transistor designed for high current switching applications in consumer instruments. ORDERING INFORMATION PART NUMBER 2SK3053 PACKAGE Isolated TO-220 FEATURES • Low On-State Resistance RDS(on)1 = 45 mΩ MAX. (VGS = 10 V, ID = 13 A) RDS(on)2 = 70 mΩ MAX. (VGS = 4.0 V, ID = 13 A) • Low Ciss : Ciss = 790 pF TYP. • Built-in Gate Protection Diode • Isolated TO-220 package (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Note1 VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg Note2 Note2 60 ±20 +20, −10 ±25 ±75 30 2.0 150 –55 to +150 12.5 15.6 V V V A A W W °C °C A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy IAS EAS Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % ! 2. Starting Tch = 25 °C, VDD = 30 V, RG = 25 Ω, VGS = 20 V → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D12912EJ3V0DS00 (3rd edition) Date Published May 2001 NS CP(K) Printed in Japan The mark ! shows major revised points. © 1999, 2000 2SK3053 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = 10 V, ID = 13 A VGS = 4.0 V, ID = 13 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 13 A VDS = 60 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V VGS = 0 V f = 1 MHz ID = 13 A VGS = 10 V VDD = 30 V RG = 10 Ω ID = 25 A VDD = 48 V VGS = 10 V IF = 25 A, VGS = 0 V IF = 25 A, VGS = 0 V di/dt = 100 A/µs 790 240 100 20 200 65 95 20 3.0 6.5 1.0 40 45 1.0 8.0 MIN. TYP. 28 46 1.6 16 10 ±10 MAX. 45 70 2.0 UNIT mΩ mΩ V S µA µA pF pF pF ns ns ns ns nC nC nC V ns nC ! Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge ! Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V BVDSS VDS 50 Ω L VDD ! TEST CIRCUIT 2 SWITCHING TIME D.U.T. RL PG. RG VDD ID 90 % 90 % VGS VGS Wave Form 90 % 0 10 % IAS ID VDD VGS 0 τ τ = 1 µs Duty Cycle ≤ 1 % ID ID Wave Form 0 10 % […]

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K3053 Datasheet


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