K3115 Datasheet – Nch Power MOSFET – 2SK3115

Part Number : K3115

Function : 2SK3115

Manufactures : NEC

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Description :

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3115 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching haracteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 26 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) • Gate voltage rating ±30 V • Low on-state resistance RDS(on) = 1.2 Ω MAX. (VGS = 10 V, ID = 3.0 A) • Avalanche capability ratings ORDERING INFORMATION PART NUMBER 2SK3115 PACKAGE Isolated TO-220 5 (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 600 ±30 ±6.0 ±24 2.0 35 150 −55 to +150 6.0 24 V V A A W W °C °C A mJ Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13338EJ2V0DS00 (2nd edition) Date Published January 2001 NS CP (K) Printed in Japan The mark 5 shows major revised points. © 1998, 2001 2SK3115 ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristics Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 450 V VGS = 10 V ID = 6.0 A IF = 6.0 A, VGS = 0 V IF = 6.0 A, VGS = 0 V di/dt = 50 A/µs Test Conditions VDS = 600 V, VGS = 0 V VGS = ±30 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 3.0 A VGS = 10 V, ID = 3.0 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 150 V, ID = 3.0 A VGS(on) = 10 V RG = 10 Ω, RL = 50 Ω 2.5 2.0 0.9 1100 200 20 18 12 50 15 26 6 10 1.0 1.4 6.5 1.2 MIN. TYP. MAX. 100 ±100 3.5 Unit µA nA V S Ω pF pF pF ns ns ns ns nC nC nC V µs µC 5 TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V 50 Ω TEST CIRCUIT 2 SWITCHING TIME D.U.T. L VDD PG. RG VGS RL VDD VDS 90% 90% 10% 10% VGS Wave Form 0 10% VGS(on) 90% BVDSS IAS ID VDD VDS VGS 0 τ τ = 1 µs Duty Cycle ≤ 1 […]

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K3115 Datasheet


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