K3562 Transistor – 600V, 2SK3562 (MOSFET)

This is one of the MOSFET types. This is a kind of the transistor.

This post explains for the semiconductor K3562.

The Part Number is K3562.

The function of this semiconductor is Silicon N Channel MOS Type Transistor.

Manufacturers : Toshiba Semiconductor

Images

K3562 Transistor mosfet

Applications : Switching Regulator

 

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K3562 image

Description :

2SK3562 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) • • • • Low drain-source ON resistance: RDS (ON) = 0.9Ω (typ.) High forward transfer admittance: |Yfs| = 5.0S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol VDSS VDGR VGSS DC (Note 1) ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 6 24 40 345 6 4 150 -55~150 A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source Unit V V V Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-67 2-10U1B Weight : 1.7 g (typ.) Thermal Character […]

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pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 600 V
2. Gate to source voltage : VGSS = 600 V
3. Drain current : ID = 6 A
4. Drain power dissipation : PD = 40 W
5. Single pulse avalanche energy : Eas = 345 mJ
6. Avalanche curren : Iar = 6 A
7. Repetitive avalanche energy : Ear = 4 mJ
8. Channel temperature : Tch = 150 °C
9. Storage temperature : Tstg = -55 to +150 °C

K3562 Transistor Datasheet