K3563 – 2SK3563

Part Number : K3563

Function : 2SK3563

Manufactures : Toshiba Semiconductor

Images :

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K3563 image

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pinout

Description :

TENTATIVE 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅥ) 2SK3563 unit:mm Switching Regulator Applications 10±0.3 Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 5 20 35 180 5 3.5 150 -55~150 A W mJ A mJ °C °C Unit 0.69±0.15 2.8Max V V V 2.54±0.25 0.64±0.15 2.54±0.25 2.6 Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range 1. 2. 3. Gate Drain Source JEDEC JEITA TOSHIBA ― ― ― Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 3.57 62.5 Unit 2 °C/W °C/W Note 1: Please use devices on conditions that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C(initial), L = 12.2 mH, IAR = 5 A, RG = 25 Ω Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 3 1 1 2003-01-27 4.5±0.2 1 2 3 12.5 Min. 1.1 1.1 15.0±0.3 • • • • Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 3.5S (typ.) Low leakage current: IDSS = 100 μA (VDS = 500 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) φ3.2±0.2 3.9 3.0 2.7±0.2 2SK3563 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge tf toff Qg Qgs Qgd VDD ∼ − 400 V, VGS = 10 V, ID = 5 A Duty < = 1%, tw = 10 µs Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton 10 V VGS 0V 15 Ω ID = 2.5 A VOUT VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±25 V, VDS = 0 V ID = ±10 µA, VGS = 0 V VDS = 500 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 2.5 A VDS = 10 V, ID = 2.5 A Min  ±30  500 2.0  1.5   Typ.      1.35 3.5 550 7 70 10 20 10 50 16 10 6 Max ±10  100  4.0 1.50    pF Unit µA V µA V V Ω S            ns RL = 90 Ω VDD ∼ − 225 V      nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDR [...]

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K3563 Datasheet


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