K3563 PDF Datasheet – 500V, 5A, MOSFET, 2SK3563

This post explains for the semiconductor 2SK3563.

The Part Number is K3563.

The function of this semiconductor is 500V, MOSFET.

Manufacturer: Toshiba Semiconductor

Preview images :

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K3563 image

Description:

The K3563 is Silicon N Channel MOS Type Field Effect Transistor.

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Features:

1. Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.)

2. High forward transfer admittance: |Yfs| = 3.5S (typ.)

3. Low leakage current: IDSS = 100 μA (VDS = 500 V)

4. Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

 

Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 500 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 5  A
4. Drain Power Dissipation: Pd = 35 W (Tc = 25°C)
5. Channel temperature: Tch =  150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

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pinout

Applications:

1. Switching Regulator

K3563 Datasheet