K3569 PDF – 600V, N-ch, MOSFET (Transistor)

This post explains for the semiconductor K3569.

The Part Number is K3569.

The function of this semiconductor is 600V, N-ch, MOSFET (Transistor).

Manufacturers : Toshiba Semiconductor

Images

K3569 transistor mosfet

Applications

Switching Regulator

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K3569 image

Description :

2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3569 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.54Ω (typ.) High forward transfer admittance: |Yfs| = 8.5S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 10 40 45 363 10 4.5 150 -55~150 A W mJ A mJ °C °C Unit V V V 1: Gate 2: Drain 3: Source Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-67 2-10U1B Weight : 1.7 g (typ.) Note: Using continuously un […]

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pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 600 V
2. Gate to source voltage : VGSS = 600 V
3. Drain current : ID =  10 A
4. Drain power dissipation : PD = 45 W
5. Single pulse avalanche energy : Eas = 353 mJ
6. Avalanche curren : Iar = 10 A
7. Repetitive avalanche energy : Ear = 4.5 mJ
8. Channel temperature : Tch = 150 °C
9. Storage temperature : Tstg = -55 to +150 °C

K3569 PDF Datasheet

K3569 pdf