K3667 Datasheet – N-Ch, MOSFET, 600V, (Transistor)

This is one of the MOSFET types. This is a kind of the transistor.

Part Number : K3667, 2SK3667

Function : 600V, N-Channel MOSFET (Transistor)

Package : TO-220 Type

Manufactures : Toshiba Semiconductor

Images :

K3667 transistor datasheet

Description :

2SK3667 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)

Applications : Switching Regulator

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K3667 image

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pinout

 

Features :

1. Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.)
2. High forward transfer admittance: |Yfs| = 5.5S (typ.)
3. Low leakage current: IDSS = 100μA (VDS = 600 V)
4. Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 600 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 7.5 A
4. Drain power dissipation : PD = 45 W
5. Single pulse avalanche energy : Eas = 189 mJ
6. Avalanche curren : Iar = 7.5 A
7. Repetitive avalanche energy : Ear = 4.5mJ
8. Channel temperature : Tch = 150 °C
9. Storage temperature : Tstg = -55 to +150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.78 62.5 Unit °C/W °C/W 1 2

Note 1: Ensure that the channel temperature does not exceed 150℃. Note 2: VDD = 90 V, Tch = 25°C, L = 5.88 mH, IAR = 7.5 A, RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.  […]

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K3667 Datasheet