This post explains for the mosfet 2SK3797.
The Part Number is K3797.
The function of this semiconductor is N-Chanell MOSFET.
The package is TO-220 Type.
Manufacturer: Toshiba Semiconductor
Preview images :
This is Silicon N-Channel MOS Type Transistor.
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 13 A
4. Allowable Power Dissipation: Pd = 50 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
2SK3797 TOSHIBA (π-MOSVI) 2SK3797 Unit: mm Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 13 52 50 1033 13 5.0 150 -55~150 A W mJ A mJ °C °C Unit V V V 1: Gate 2: Drain 3: Source Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-67 2-10U1B Weight: 1.7 g (typ.) Note: Using continuously u […]