K3868 Datasheet – 500V, N-ch MOSFET – Toshiba

This post explains for the semiconductor K3868.

The Part Number is K3868.

The function of this semiconductor is 2SK3868.

Manufacturers : Toshiba Semiconductor

Preview images :

1 page
K3868 image

Description :

2SK3868 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3868 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: |Yfs| = 3 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 500 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 5 20 35 180 5 3.5 150 -55 to 150 A W mJ A mJ °C °C Unit V V V Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range 1: Gate 2: Drain 3: Source JEDEC JEITA TOSHIBA ― SC-67 2-10U1B Weight: 1.7 g (typ.) Note: Using continuous […]

2 page
pinout

K3868 Datasheet