K3878 PDF Datasheet – 900V, 9A, MOSFET – 2SK3878

Part Number: K3878

Function: 900V, 9A, Field Effect Transistor

Package: TO-3PN Type

Manufacturer: Toshiba


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K3878 image

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This is Silicon N-Channel MOSFET (2SK3878).


Switching Regulator


1. Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.)

2. High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)

3. Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)

4. Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm

Absolute Maximum Ratings (Ta = 25°C) :

Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse Thermal Characteristics 2 Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 0.833 50 Unit °C/W °C/W 1 Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device. Note 2: VDD = 90 V, Tch = 25°C, L = 17.6 mH, RG = 25 Ω, IAR = 9 A Note 3: Repetitive rating: pulse width limited by max junction temperature This transistor is an electrostatic-sensitive device. Handle with care. 3 1 2010-05-06 Free Datasheet http:/// 2SK3878 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Gate-source breakdown voltage Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR)  Turn-on time Switching time Fall time ⎯ R […]

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K3878 Datasheet