K3878 – Field Effect Transistor

Part Number : K3878

Function : Field Effect Transistor

Manufactures : Toshiba

Images :

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K3878 image

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Description :

2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV) 2SK3878 Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 9 27 150 778 9 15 150 −55 to 150 Unit V V V A W mJ A mJ °C °C 1. GATE 2. DRAIN (HEATSINK) 3. SOURCE Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-65 2−16C1B Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics 2 Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 0.833 50 Unit °C/W °C/W 1 Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device. Note 2: VDD = 90 V, Tch = 25°C, L = 17.6 mH, RG = 25 Ω, IAR = 9 A Note 3: Repetitive rating: pulse width limited by max junction temperature This transistor is an electrostatic-sensitive device. Handle with care. 3 1 2010-05-06 Free Datasheet http:/// 2SK3878 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Gate-source breakdown voltage Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) ⎪Yfs⎪ Ciss Crss Coss tr ton tf ID = 4 A VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±30 V, VDS = 0 V IG = ±10 μA, VDS = 0 V VDS = 720 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 4 A VDS = 15 V, ID = 4 A Min ⎯ ±30 ⎯ 900 2.0 ⎯ 3.5 ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 1.0 7.0 2200 45 190 25 Max ±10 ⎯ 100 ⎯ 4.0 1.3 ⎯ ⎯ ⎯ pF Unit μA V μA V V Ω S ⎯ 10 V VGS 0V 4.7 Ω ⎯ ⎯ ⎯ ns ⎯ VOUT Turn-on time Switching time Fall time ⎯ R […]

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K3878 Datasheet


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