K4106 PDF Datasheet – 500V, 12A, MOSFET – 2SK4106

This post explains for the semiconductor 2SK4106.

The Part Number is K4106.

The function of this semiconductor is 500V, MOSFET.

Manufacturer: Toshiba

Preview images :

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K4106 image

Description:

The K4106 is Silicon N Channel MOS Type Field Effect Transistor.

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Features:

• Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.)

• High forward transfer admittance: |Yfs| = 8.5 S (typ.)

• Low leakage current: IDSS = 100 μA (max) (VDS = 500 V)

• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

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pinout

Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 500 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 12 A
4. Drain Power Dissipation: Pd =  45 W (Tc = 25°C)
5. Channel temperature: Tch =  150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. Switching Regulator

K4106 Datasheet