Part Number: K4A60DA, TK4A60DA
Function: 600V, 3.5A, N-Channel, MOSFET, Transistor
Package: TO-220 Type
Manufacturer: Toshiba
Images:
1 page
Description
K4A60DA is 600V, 3.5A, Silicon N Channel MOS Type Field Effect Transistor(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.
When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.
Features
1. Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.)
2. High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.)
3. Low leakage current: IDSS = 10 μA (VDS = 600 V)
4. Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 3.5 A
4. Drain Power Dissipation: Pd = 35 W (Tc = 25°C)
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
3 page
Applications:
1. Switching Regulator
K4A60DA PDF Datasheet
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