K50T60 – IKW50N60T

Part Number : K50T60

Function : IKW50N60T

Manufactures : Infineon Technologies

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K50T60 image

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pinout

Description :

TrenchStop Series IKW50N60T q Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs Designed for : – Frequency Converters – Uninterrupted Power Supply Trench and Fieldstop technology for 600 V applications offers : – very tight parameter distribution – high ruggedness, temperature stable behavior – very high switching speed – low VCE(sat) Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel EmCon HE diode Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V IC 50A VCE(sat),Tj=25°C 1.5V Tj,max 175°C Marking Code K50T60 Package TO-247 C G E P-TO-247-3-1 (TO-220AC) • Type IKW50N60T Ordering Code Q67040S4718 Maximum Ratings Parameter Collector-emitter voltage DC collector current, limited by Tjmax TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C) Diode forward current, limited by Tjmax TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time 2) Symbol VCE IC Value 600 801) 50 Unit V A ICpuls IF 150 150 100 50 IFpuls VGE tSC Ptot Tj Tstg – 150 ±20 5 333 -40…+175 -55…+175 260 V µs W °C VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s 1) 2) Value limited by bond wire Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.1 Dec-04 Power Semiconductors TrenchStop Series IKW50N60T q Max. Value 0.45 0.8 40 Unit K/W Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V, I C = 0. 2mA VCE(sat) V G E = 15V, I C = 50A T j = 25 ° C T j = 17 5 ° C Diode forward voltage VF V G E = 0V, I F = 5 0 A T j = 25 ° C T j = 17 5 ° C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 0. 8mA, V C E = V G E V C E = 600V , V G E = 0V T j = 25 ° C T j = 17 5 ° C Gate-emitter leakage current Transconductance Integrated gate resistor Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current1) IC(SC) V G E = 1 5V, t S C ≤ 5 µ s V C C = 400V, T j ≤ 150 ° C 458.3 A Ciss Coss Crss QGate LE V C E = 25V, V G E = 0V, f = 1 M Hz V C C = 4 80V, I C = […]

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K50T60 Datasheet


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