K6A60DR – TK6A60D

Part Number : K6A60D, K6A60DR

Function : TK6A60D, TK6A60D

Manufactures : Toshiba Semiconductor

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K6A60D image

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Description :

TK6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK6A60D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC Drain current (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 ±30 6 24 40 173 6 4.0 150 -55 to 150 A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source Unit V V Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-67 2-10U1B Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/’’Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics 2 Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 3.125 62.5 Unit °C/W °C/W 1 Note 1: Ensure that the channel temperature does not exceed 150℃. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 8.4 mH, RG = 25 Ω, IAR = 6 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 3 1 2008-09-16 Free Datasheet http:// TK6A60D Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Switching time Rise time Turn-on time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) ⎪Yfs⎪ Ciss Crss Coss tr ton tf toff Qg Qgs Qgd VDD ≈ 400 V, VGS = 10 V, ID = 6A Duty ≤ 1%, tw = 10 μs 10 V VGS 0V 50 Ω ID = 3 A VOUT VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±30 V, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 3 A VDS = 10 V, ID = 3 A Min ⎯ ⎯ 600 2.0 ⎯ 0.8 ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ 1.0 3.0 800 4 100 20 40 12 60 16 10 6 Max ±1 10 ⎯ 4.0 1.25 ⎯ ⎯ ⎯ pF Unit μA μA V V Ω S ⎯ ⎯ ⎯ �� […]

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K6A60D Datasheet


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