K6A65D PDF Datasheet – N-Ch, 650V, MOSFET ( TK6A65D )

Part Number : K6A65D, TK6A65D

Function : 650V, Silicon N Channel MOSFET

Package : TO-220 Type

Manufactures : Toshiba Semiconductor

Images :

K6A65D pdf mosfet

1. Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ.)
2. High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.)
3. Low leakage current: IDSS = 10 μA (max) (VDS = 650 V)
4. Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 650 V
2. Gate to source voltage : VGSS = ± 30 V
3. Drain current : ID = 6 A
4. Drain peak current : ID(pulse) = 24 A
5. Drain power dissipation = 45 W
6. Single pulse avalanche energy = 281 mJ
7. Avalanche current : IAR = 6 A
8. Repetitive avalanche energy : EAR = 4.5 mJ
9. Channel temperature : Tch = 150 °C
10. Storage temperature range : Tstg = -55 to 150 °C

Applications

Switching Regulator

K6A65D PDF Datasheet

K6A65D pdf