K75T60 – 600V IGBT – IKW75N60T – Infineon

Part Number : K75T60

Function : IGBT

Manufactures : Infineon Technologies

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K75T60 image

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Description :

IKW75N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Positive temperature coefficient in VCE(sat)  very tight parameter distribution  high ruggedness, temperature stable behaviour  very high switching speed  Low EMI  Very soft, fast recovery anti-parallel Emitter Controlled HE diode  Qualified according to JEDEC1) for target applications  Pb-free lead plating; RoHS compliant  Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Applications:  Frequency Converters  Uninterrupted Power Supply C G E PG-TO247-3 Type IKW75N60T VCE 600V IC 75A VCE(sat),Tj=25°C 1.5V Tj,max 175C Marking K75T60 Package PG-TO247-3 Maximum Ratings Parameter Collector-emitter voltage, Tj ≥ 25C DC collector current, limited by Tjmax TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE = 600V, Tj = 175C, tp = 1µs Diode forward current, limited by Tjmax Diode pulsed current, tp limited by Tjmax TC = 25C TC = 100C Gate-emitter voltage Short circuit withstand time3) VGE = 15V, VCC  400V, Tj  150C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Symbol VCE IC ICpuls – IF IFpuls VGE tSC Ptot Tj Tstg Tsold Value 600 802) 75 225 225 802) 75 225 20 5 428 -40…+175 -55…+150 260 Unit V A V s W C 1) J-STD-020 and JESD-022 2) Value limited by bondwire 3) Allowed number of short circuits: <1000; time between short circuits: >1s. IFAG IPC TD VLS 1 Rev. 2.8 2013-12-05 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient IKW75N60T TRENCHSTOP™ Series q Symbol RthJC RthJCD RthJA Conditions Max. Value 0.35 0.6 40 Unit K/W Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage Diode forward voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Transconductance Integrated gate resistor V(BR)CES VCE(sat) VF VGE(th) ICES VGE=0V, IC=0.2mA VGE = 15V, IC=75A Tj=25C Tj=175C VGE=0V, IF=75A Tj=25C Tj=175C IC=1.2mA,VCE=VGE VCE=600V, VGE=0V Tj=25C Tj=175C IGES gfs RGint VCE=0V,VGE=20V VCE=20V, IC=75A min. 600 – 4.1 – Value Typ. – 1.5 1.9 1.65 1.6 4.9 41 – Unit max. -V 2.0 – 2.0 – 5.7 µA 40 5000 100 – nA S Ω Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Ciss Coss Crss QGate Internal emitter inductance LE measure […]

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K75T60 Datasheet

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