K75T60 IGBT – 600V, 75A, Transistor (IKW75N60T)

This is one of the IGBT types. The IGBT is insulated-gate bipolar transistor.

Part Number : IKW75N60T

Marking : K75T60

Function : 600V, 75A, IGBT

Package : TO-247 Type

Manufactures : Infineon Technologies

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K75T60 image

Features

1. Very low VCE(sat) 1.5V (typ.)
2. Maximum Junction Temperature 175°C
3. Short circuit withstand time 5 µs
4. Positive temperature coefficient in VCE(sat)
5. very tight parameter distribution
6. high ruggedness, temperature stable behaviour
7. very high switching speed
8. Low EMI
9. Very soft, fast recovery anti-parallel Emitter Controlled HE diode
10. Qualified according to JEDEC1) for target applications
11. Pb-free lead plating; RoHS compliant
12. Complete product spectrum and PSpice

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pinout

Absolute maximum ratings ( Tc=25°C )

1. Collector-emitter voltage : Vce = 600 V
2. DC collector current : Ic = 80 A
3. Gate-emitter voltage : Vge = ± 20 V
4. Storage temperature : Tstg = -55 ~ +150°C

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image

K75T60 Datasheet