This post explains for the semiconductor K80E08K3.
The Full Part Number is TK80E08K3.
The function of this semiconductor is Silicon N Channel MOSFET.
The manufacturers of this product is Toshiba.
See the preview image and the PDF file for more information.
Preview images :
Low drain−source ON resistance : RDS (ON) = 7.5 mΩ (typ.)
High forward transfer admittance : |Yfs| = 135 S (typ.)
Low leakage current : IDSS = 10 μA (max) (VDS = 75 V)
Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain−source voltage : VDSS = 75 V
2. Drain−gate voltage (RGS = 20 kΩ) : VDGR = 75 V
3. Gate−source voltage : VGSS = ±20 V
4. Drain power dissipation (Tc = 25°C) : PD = 200 W
5. Single pulse avalanche energy(Note 2) : EAS = 107 mJ
6. Avalanche current : IAR = 40 A
7. Repetitive avalanche energy (Note 3) : EAR = 20 mJ
8. Peak diode recovery dv/dt (Note 5) : dv/dt = 12 V/ns
9. Channel temperature (Note 4) : Tch = 175 °C